VIDEO
CEA-Leti scales ferroelectric RAM to 22nm node
Video Summary
Laurent Grenouillet, Integration and Device Engineer - FeRAM & OxRAM non volatile memories · CEA-Leti, discusses the organisation’s major advance in memory technology: the demonstration of ferroelectric RAM (FeRAM) scaled to the 22nm manufacturing node using an innovative 3D capacitor architecture. The breakthrough, presented at the VLSI Conference in Honolulu, removes a longstanding density barrier that has kept FeRAM from competing with volatile memory - and opens the door to faster, more energy-efficient artificial intelligence (AI) at the edge.
